Emerging New Memory: Architecture and Circuits for Reliability
High Speed Serial Links and Blind Clock Data Recovery
3-D Integrated Circuits
Journal Articles
(2023)
Dynamic Power Reduction in TCAM Using Advanced Selective Pre-Charging of Match Lines.
ELECTRONICS.
12,
17
(2023)
Fast and Efficient Offset Compensation by Noise-Aware Pre-Charge and Operation of DRAM Bit Line Sense Amplifier.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS.
70,
4
(2021)
Reliability Analysis on TiN Gated NMOS Transistors.
SCIENCE OF ADVANCED MATERIALS.
13,
6
(2020)
A 4-GHz Sub-Harmonically Injection-Locked Phase-Locked Loop With Self-Calibrated Injection Timing and Pulsewidth.
IEEE JOURNAL OF SOLID-STATE CIRCUITS.
55,
10
(2019)
A Highly Linear Neuromorphic Synaptic Device Based on Regulated Charge Trap/Detrap.
IEEE ELECTRON DEVICE LETTERS.
40,
11
(2019)
Behavior Modeling for Charge Storage in Single-Poly Floating Gate Device.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY.
19,
10
(2019)
Power-Efficient Nonvolatile Ternary Content Addressable Memory with Flexible Search Scope Using Reconfigurable Match Line Segment and Selective Search Line.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY.
19,
10
(2019)
A Study of Read Margin Enhancement for 3T2R Nonvolatile TCAM Using Adaptive Bias Training.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS.
27,
8
(2019)
A Dual-loop Phase Locked Loop with Frequency to Voltage Converter.
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE.
19,
3
(2019)
Power Efficient and Reliable Nonvolatile TCAM With Hi-PFO and Semi-Complementary Driver.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS.
66,
2
(2019)
Power Efficient and Reliable Nonvolatile TCAM With Hi-PFO and Semi-Complementary Driver..
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS.
66,
2
(2018)
Self-timed Read Termination for Reduced Read Disturbance and Power Consumption in Large-scale Cross-point ReRAM Arrays.
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE.
18,
6
(2018)
A Continuous SAR-DCC with the Tracking Logic.
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE.
18,
3
(2018)
Understanding and Applications of Semiconductor Memory Devices.
정보과학회지.
36,
6
(2017)
3T-2R non-volatile TCAM with voltage limiter and self-controlled bias circuit.
ELECTRONICS LETTERS.
53,
13
(2017)
A Fast and Reliable Cross-Point Three-State/Cell ReRAM.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS.
25,
5
(2017)
Self-adjusting sensing circuit without speed penalty for reliable STT-MRAM.
ELECTRONICS LETTERS.
53,
4
(2017)
Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition.
ACS APPLIED MATERIALS & INTERFACES.
9,
1
(2017)
Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy.
RSC ADVANCES.
7,
2
(2016)
A Low-Power Two-Line Inversion Method for Driving LCD Panels.
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE.
16,
4
Publications
(2008)
우주를 향한 165일간의 도전.
시그마북스.
Co-author
Patent/Intellectual Property
TCAM device and operating method thereof.
US 10 482 962B2.
20191119.
UNITED STATES
Memory device driving matching lines according to priority.
US 10 395 719 B2.
20190827.
UNITED STATES
Phase-rotating phase locked loop and method of controlling operation thereof.
US 14/272,975.
20160705.
UNITED STATES
반도체 메모리 장치, 검증 독출 방법 및 시스템.
10-2012-0153450.
20150812.
KOREA, REPUBLIC OF
니어보레이트 수신장치.
2013-0024491.
20150106.
KOREA, REPUBLIC OF
시간적 및 공간적 산포를 극복하는 메모리 독출법.
10-2013-0015046.
20141202.
KOREA, REPUBLIC OF
반도체 메모리 장치, 리프레쉬 방법 및 시스템.
10-2012-0139735.
20140811.
KOREA, REPUBLIC OF
멀티플 차지 펌프를 사용하는 허쉬-키스 변조 확산 대역 클록 발생기.
10-2012-0156583.
20140523.
KOREA, REPUBLIC OF
반도체 메모리 장치, 프로그램 방법 및 시스템.
10-2012-0122369.
20140409.
KOREA, REPUBLIC OF
밴드갭 코어 두 개와 스위치를 사용하여 공급전압을 레귤레이팅 밴드갭 레퍼런스 회로.
10-2011-0144872.
20130910.
KOREA, REPUBLIC OF
듀얼 전하펌프.
10-2011-0106738.
20130902.
KOREA, REPUBLIC OF
위상 보간 기능을 갖는 위상고정루프 및 위상고정루프에서 위상 보간을 수행하는 방법.
10-2011-0014022 .
20121126.
KOREA, REPUBLIC OF
동적인 루프 대역 제어기를 가지는 위상고정루프.
10-2010-0079546.
20121107.
KOREA, REPUBLIC OF
임피던스 매칭 및 프리앰퍼시스를 위한 전압 조절기, 임피던스 매칭 및 프리앰퍼시스를 위한.
10-2010-0075334.
20120417.
KOREA, REPUBLIC OF
Non-volatile memory device including block state confirmation cell and method of operating the same.
2008-071349 .
20111101.
UNITED STATES
Multi-layered memory devices.
08164176.3.
20110301.
UNITED STATES
Semiconductor devices and methods of manufacturing the same.
09160223.5.
20091118.
EU
Self-Calibrating Temperature Sensors and Methods Thereof.
11/790174.
20091117.
UNITED STATES
전하를 재활용하는 전하펌프 회로.
10-2009-0090352.
20090924.
KOREA, REPUBLIC OF
Conference Paper
(2022)
A 6.23-bit FG-based Neuromorphic Synaptic
Device with Extended Input Range by Linearity Improvement.
International Conference on Electronics, Information and Communications.
KOREA, REPUBLIC OF
(2020)
A High Efficiency Variable Stage and Frequency Charge Pump for Wide Range ISPP.
2020 IEEE International Symposium on Circuits and Systems (ISCAS).
SPAIN
(2020)
Architecture-Accuracy Co-optimization of ReRAM-based Low-cost Neural Network Processor.
Proceedings of the 2020 on Great Lakes Symposium on VLSI.
CHINA
(2020)
A 35×10 Charge-Trap Synaptic Memory for 5×7 Dot Matrix Recognition.
2020 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS).
ITALY
(2020)
Smart Adaptive Refresh for Optimum Refresh Interval Tracking using in-DRAM ECC.
2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS).
UNITED STATES
(2019)
CMOS-Compatible Learning Device for Neuromorphic Synapse Application using Adjustable Hot Carrier Injections.
62nd IEEE International Midwest Symposium on Circuits and Systems.
UNITED STATES
(2019)
Market and Industry Trends of Fan-Out Packaging.
34th international technical conference on circuits/systems, computers and communications.
KOREA, REPUBLIC OF
(2019)
A 16x16 programmable analog vector matrix multiplier using CMOS compativle floating gate device.
International Conference on Electronics, Information and Communication.
NEW ZEALAND
(2019)
Analysis of power consumption on match line of TCAM and power efficient architecture.
International Conference on Electronics, Information, and Communication.
NEW ZEALAND
(2019)
High performance 4T-2R Non-Volatile TCAM
With NMOS Booster.
International Conference on Electronics, Information, and Communication.
NEW ZEALAND
(2019)
Low Power 3T-2R Non-Volatile TCAM cell with Dual Match-Line.
International Conference on Electronics, Information and Communication.
NEW ZEALAND
(2018)
Low Power TCAM Based Search Engine Supporting Non-volatile Memory Cell with Priority Encoding and Selectively Activated Search Line and Cell Array.
IEEE, International Symposium on Circuits and Systems.
ITALY
(2018)
A Built-In Self Test Compensating Process-Voltage Variation in Data Paths of High Performance DRAMs.
IEEE International Memory Workshop.
JAPAN
(2015)
A Covalent-Bonded Cross-Coupled Current-Mode Snse Amplifier for STT-MRAM with 1T1MTJ Common Source-Line Structure Array.
ISSCC(IEEE, International Solid-State Circuit Conference).
UNITED STATES
(2012)
A 3.0 Gb/s clock data recovery circuits based on digital DLL for clock-embedded display interface.
European Solid-State Circuit Conference.
FRANCE
(2012)
DESIGN OF 7.5PS RESOLUTION 3-LEVEL SUBRANGING TIME-TO-DIGITAL CONVERTER WITH LINEARITY CALIBRATION.
International Technology Conference on Circuit System, Computers and Communication.
JAPAN
(2012)
CML Mixer 형태 Phase Interpolator의 비선형성 연구.
SoC 학술대회.
KOREA, REPUBLIC OF
(2012)
A photovoltaic (PV) system that operates at the maximum power point (MPP) is presented. In this system, in order to achieve maximum power point tracking (MPPT), a charge pump is used of which clock frequency is adaptable to a change in light intensity with the help of a luminance-controlled oscillator (LCO). The measurement results show that the harvested power is increased approximately by 50% over a wide range of light intensity due to MPPT. Based on the characteristics of the fabricated PV cells, the system was verified using 0.35-μm CMOS technology and implemented on a bread board..
반도체학술대회.
KOREA, REPUBLIC OF
(2010)
A Fully CMOS-Compitible 672-bit EEPROM for Passive RFID Tag Application.
Asian solid-state circuits conference.
CHINA
(2010)
A low swing differential voltage-mode driver with pre-emphasis and self-diagnosis.
ITC-CSCC.
THAILAND
